搜索结果: 1-7 共查到“电子技术 Modeling,”相关记录7条 . 查询时间(0.234 秒)
Simulation of optically controlled GaN (Gallium Nitride) using analytical modeling of high frequency response and switching applications
Modeling analysis optical control gallium nitride ion dose ion energy ion range of parameters
2014/12/31
In this project, an analytical modeling of optically controlled Gallium Nitride has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both ...
Physics based analytical modeling of Gallium Arsenide MESFET for evaluation of junction capacitance with new modeling conception
Modeling gaas mesfets leakage current the drain-source voltage voltage current voltage characteristic
2014/12/31
In this project, an analytical modeling of Gallium Arsenide MESFET has been reported. The model has been developed to obtain the drain current versus drain-source voltage for different gate-source vol...
Analytical modeling of silicon carbide MESFET
Silicon carbide mathematics software the physical devices analog channel current
2014/12/31
This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to find the characteristics of SIC ME...
2014 International Conference on Life System Modeling and Simulation &2014International Conference on Intelligent Computing for Sustainable Energy and Environment
2014 International Conference Life System Modeling
2014/3/21
2014 生命系统建模与仿真国际会议(LSMS 2014)和2014 可持续能源与环境中的智能计算国际会议(ICSEE 2014)将于2014 年9 月20~23 日在中国上海举行。
LSMS-ICSEE 2014 是面向全世界生命系统建模与仿真、可持续能源与环境智能计算理论、方法和应用等相关研究领域科技人员和学者的国际学术会议，LSMS会议已于2004、2007、2010，ICSEE会议已于2...
Modeling and Measurements of Novel Monolithic Filters
Novel Monolithic Filters hairpin resonators ferroelectric materials
2010/12/6
This paper presents novel multilayer tuneable high Q-filters based on hairpin resonators including ferroelectric materials. This configuration allows the miniaturization of these filters to a size tha...
Behavioral Modeling for Simulation of MOEMS Systems
Behavioral Modeling Simulation MOEMS Systems
2010/7/16
Integrated MOEMS systems are a rapidly growing field with great potential. Accurate simulation of MOEMS systems will allow analysis and optimization of system performance before costly and time-consum...
Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
I–V characteristics MOS LDD Modeling Defects
2010/12/7
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...