搜索结果: 1-7 共查到“电磁学 p-type”相关记录7条 . 查询时间(0.099 秒)
Generalized EMP and Nonlinear Schrodinger-type Reformulations of Some Scaler Field Cosmological Models
Friedmann-Lemaitre-Robertson-Walker Perfect fluid, Schrodinger equation
2014/12/8
We show that Einstein’s gravitational field equations for the Friedmann- Robertson-Lemaître-Walker (FRLW) and for two conformal versions of the Bianchi I and Bianchi V perfect fluid scalar field ...
The effects of Co-Ti co-doping on the magnetic,electrical,and magnetodielectric behaviors of M-type barium hexaferrites
materials science barium coercive force doped materials electrical properties ferrites ferroelectric materials magnetic fields magnetic properties magnetization
2016/12/2
Magnetic, electrical and magnetodielectric properties have been studied in Co-Ti co-doped M-type hexaferrite BaCo x Ti x Fe12-2x O19 (x = 0 65 4). With the incorporation of Co-Ti, both their ferromagn...
Magnetic properties and magnetoresistance of HfFe6Ge6-type Dy1-xGdxMn6Ge6 (x=0.1-0.6) compounds
2007/7/28
期刊信息
篇名
Magnetic properties and magnetoresistance of HfFe6Ge6-type Dy1-xGdxMn6Ge6 (x=0.1-0.6) compounds
语种
英文
撰写或编译
撰写
作者
L.G.Zhang,R.W.Wang,L.Li,S.Y.Zhang,J.L.Yao,B.G.Shen
第一作者单位
武汉科技大学
刊物名称
Chinese ...
期刊信息
篇名
Magnetic properties and magnetoresistance of HfFe6Ge6-type Er1-xGdxMn6Ge6 and Ho1-xGdxMn6Ge6 compounds (x=0.2-0.9)
语种
英文
撰写或编译
撰写
作者
L.G.Zhang,R.W.Wang,L.Li,S.Y.Zhang,J.L.Yao,B.G.Shen
第一作者单位
武...
期刊信息
篇名
Structural and Magnetic Properties of Exchange Spring type FePt/Fe multilayers
语种
英文
撰写或编译
作者
Y.S Gu,X.Y. Zhan,J. He,Z. Ji,Y. Zhang,C. Zhou
第一作者单位
刊物名称
Materials Science Forum
页面
475-479 (2005...
Near Bandedge Optical Absorption Processes in Semi Insulating and N-Type GaAs
GaAs near bandedge absorption reverse-contrast
2010/4/13
Near bandedge optical absorption processes in semi-insulating (SI) GaAs and Te-doped n-type GaAs crystals were investigated in the temperature range 10--300 K. We observed absorption peaks whose maxim...
Energy Relaxation Rate of Hot Electrons in N-Type GaN Epilayers using Heat Pulse Techniques
Energy Relaxation Rate N-Type GaN Epilayers Hot Electrons
2010/4/16
We have measured the energy relaxation rate of hot electrons in MBE grown bulk GaN epilayers on GaAs and sapphire substrates over the electron temperature range 1 - 130 K. The measurements were made u...