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Plasma processing is an essential tool for making the latest optoelectronic devices. From dry etching of laser facets to high density passivation understanding how the plasma can effect your device is...
It is our great pleasure to announce that the 14th International Conference on Plasma Based Ion Implantation & Deposition, PBII&D 2017 will be held at the banqueting hall on the third floor of New Wo...
Transmission electron microscopy (TEM) has been employed to characterize micro/magnetic structural details of magneto-optical (MO) recording TbFeCo thin films as a function of dcmagnetron sputtering p...
Sculptured copper thin films were deposited on glass substrates, using different deposition rates. The nano-structure and morphology of the films were obtained, using X-ray diffraction (XRD), atomic ...
The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bi...
Graphene has attracted enormous attention due to its numerous remarkable properties and wide range of potential applications. To fully realize its potential, graphene needs to be synthesized in large ...
We synthesize large-area graphene via atmospheric-pressure (AP) chemical vapor deposition (CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure (LP) CVD on copper, optical contra...
The deposition of Diamond-like carbon (DLC) films brings excellent mechanical, chemical, optical and electronic properties to a large range of materials. However, a problem to be overcome is its poor...
Linear accelerators used in radiation therapy treatments usually provide the capability of irradiating with different dose rates. The medical physicist may choose arbitrary the dose rate to use, altho...
Wide and direct band gap ZnO thin films have been grown on conductive indium-tin-oxide (ITO) substrates by electrochemical deposition (ECD) technique using different growth parameters. High quality fi...
期刊信息 篇名 Pulsed Plasma Deposition c-BN Thin Films on Silicon Substrate 语种 英文 撰写或编译 撰写 作者 闫鹏勋,杨思泽 第一作者单位 中国科学院物理研究所 刊物名称 Phys. Stat. Sol. 页面 1994.145.K29 出版日期 1994年 4月 日 文章标识(ISSN) 相关项目 高能量密度等离子体法制备立方氮化...
期刊信息 篇名 Synthesis Characterizantion ,Langmuir-Blodgett Film Deposition and Non-inear Optical Properties of a Series of New Non-linear Optical Materials based on Azo Dynes Contaning Europiu 语种 英文 撰写或编译...
期刊信息 篇名 Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)n/(GaAs)n Monolayer Deposition 语种 英文 撰写或编译 撰写 作者 Jun He*,Xiao-Dong Wang,Bo Xu,Zhanguo Wang and Sheng-Ch...
期刊信息 篇名 Investigation of the size effect on optical properties of polycrystalline Ge deposition 语种 英文 撰写或编译 撰写 作者 Xiying Ma,W. Shi 第一作者单位 绍兴文理学院 刊物名称 Journal Material Science 页面 DOI: 10.1007/s 10853-0...
Thin films of Sb2S3 were deposited on glass substrates at 300 K by chemical bath deposition (CBD) technique and annealed at various temperatures. The absorption coefficient a was determined using the ...

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